byv12 / 13 / 14 / 15 / 16 document number 86039 rev. 1.6, 13-apr-05 vishay semiconductors www.vishay.com 1 949539 fast avalanche sinterglass diode features ? glass passivated junction hermetically sealed package soft recovery characteristic low reverse current lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications fast rectification and switching diode for example for tv-line output circuits and switch mode power supply mechanical data case: sod-57 sintered glass case terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation package byv12 v r = 100 v; i fav = 1.5 a sod-57 byv13 v r = 400 v; i fav = 1.5 a sod-57 byv14 v r = 600 v; i fav = 1.5 a sod-57 byv15 v r = 800 v; i fav = 1.5 a sod-57 byv16 v r = 1000 v; i fav = 1.5 a sod-57 parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics byv12 v r = v rrm 100 v byv13 v r = v rrm 400 v byv14 v r = v rrm 600 v byv15 v r = v rrm 800 v byv16 v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sinewave i fsm 40 a repetitive peak forward current i frm 9a e2
www.vishay.com 2 document number 86039 rev. 1.6, 13-apr-05 byv12 / 13 / 14 / 15 / 16 vishay semiconductors maximum thermal resistance t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) average forward current ? = 180 , t amb = 25 c i fav 1.5 a junction and storage temperature range t j = t stg - 55 to + 175 c non repetitive reverse avalanche energy i (br)r = 0.4 a e r 10 mj parameter test condition symbol value unit junction ambient l = 10 mm, t l = constant r thja 45 k/w on pc board with spacing 25 mm r thja 100 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 1 a v f 1.5 v reverse current v r = v rrm i r 15 a v r = v rrm , t j = 150 c i r 60 150 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr 300 ns reverse recovery charge i f = 1 a, di/dt = 5 a/ sq rr 200 nc parameter test condition part symbol value unit figure 1. typ. thermal resistance vs. lead length 94 9101 ll t l = constant 0 0 20 40 60 80 120 r therm. resist. junction/ambient (k/w) thja l - lead length ( mm ) 51015 25 30 20 100 figure 2. junction temperature vs. reverse/repetitive peak reverse voltage 0 200 400 600 800 0 40 80 120 160 240 t - junction temperature ( c ) j v r ,v rrm - reverse / repetitive peak reverse voltag e(v) 1000 94 9517 200 v rrm r thja = 100 k/w v r byv12 byv13 byv14 byv15 byv16
byv12 / 13 / 14 / 15 / 16 document number 86039 rev. 1.6, 13-apr-05 vishay semiconductors www.vishay.com 3 figure 3. forward current vs. forward voltage figure 4. max. average forward cu rrent vs. ambient temperature figure 5. reverse current vs . junction temperature i C forward curren t(a) 0.001 0.01 0.1 1 10 0 0.5 1.0 1.5 2.0 2.5 3.0 v f C forward voltag e(v) 16375 f t j = 175 c t j =25 c 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 16376 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature ( c) i - average forward current ( a ) fav r thja = 45 k/w l=10mm r thja = 100 k/w pcb:d=25mm v r =v rrm half sinewave 16377 v r =v rrm 1 10 100 1000 25 75 50 100 125 150 175 t j - junction temperature ( c) i - reverse current ( a) r figure 6. max. reverse power dissipation vs. junction temperature figure 7. diode capacitance vs. reverse voltage 16378 0 50 100 150 200 250 300 350 400 450 25 50 75 100 125 150 175 t - junction temperature ( c) p - reverse power dissipation ( mw ) r p r -limit @100 % v r p r -limit @80%v r v r =v rrm 0 5 10 15 20 25 30 35 40 16379 f=1mhz 0.1 1 10 100 v r - reverse voltag e(v) c - diode capacitance ( pf ) d
www.vishay.com 4 document number 86039 rev. 1.6, 13-apr-05 byv12 / 13 / 14 / 15 / 16 vishay semiconductors package dimensions in mm (inches) figure 8. thermal response 1 10 100 1000 z - thermal resistance f. pulse cond. (k/ w thp t p - pulse lengt h(s) 94 9522 10 C5 10 C4 10 C3 10 C2 10 C1 10 0 10 1 i frm - repetitive peak forward current ( a ) 10 0 10 1 v rrm =1000 v r thja = 100 k/w t amb =25 c t amb =45 c t amb =60 c t amb =70 c t amb =100 c cathode identification 0.82 (0.032) max. sintered glass case sod-57 94 9538 26(1.014) min. 26(1.014) min. iso method e 3.6 (0.140)max. 4.0 (0.156) max.
byv12 / 13 / 14 / 15 / 16 document number 86039 rev. 1.6, 13-apr-05 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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